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850 EVO 250GB SSD Print
June 2017
What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utiliSing a smaller footprint. 

OptimiSe daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO but up to 1.9x faster random write speeds for 120/250 GB models as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. 

Get into the fast lane with the improved RAPID mode
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance boost in all random Queue depth. 

Guaranteed endurance and reliability bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW compared to the previous generation 840 EVO backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices.

General Feature
  • Capacity: 250 GB
  • Form Factor: 2.5 inch
  • Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
  • Dimension (WxHxD): 100 x 69.85 x 6.8 mm
  • AWeight: Max. 41 g
  • Storage Memory: Samsung V-NAND
  • Controller: Samsung MGX Controller
  • Cache Memory: Samsung 512 MB Low Power DDR3



  • Sequential Read: Up to 540 MB/seconds Sequential Read
  • Sequential Write:Up to 520 MB/seconds Sequential Write
  • Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
  • Random Write (4KB, QD32): Up to 88,000 IOPS Random Write
  • Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
  • Random Write (4KB, QD1): Up to 40,000 IOPS Random Write


Special Feature

  • TRIM Support: TRIM Supported
  • S.M.A.R.T Support: S.M.A.R.T Supported
  • GC (Garbage Collection): Auto Garbage Collection Algorithm
  • Encryption Support: AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
  • WWN Support: World Wide Name supported
  • Device Sleep Mode Support: Yes
  • Average Power Consumption (system level): Average: 2.4 W Maximum: 2.4 W
  • Power consumption (Idle): Max. 50 mW
  • Allowable Voltage: 5V ± 5% Allowable voltage
  • Reliability (MTBF): 1.5 Million hours Reliability (MTBF)
  • Operating Temperature: 0 - 70 °C Operating Temperature
  • Shock: 1,500 G & 0.5 ms (Half sine)


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