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2017-07 MYM-C4SKA Colloquium- Programme Print
June 2017
Mid-year Mini-C4SKA Colloquium
13 July 2017 Thursday
AUT University Mayoral Drive/Wakefield Street
Building WF Room 503
Programme (last revised 2017-07-12 4:00pm)

New Zealand has participated in the Pre-construction design of high performance computing for the international SKA project since November 2013.  New Zealand Alliance is the entity funded by the government to organise our efforts.  It consists of AUT, Massey University, University of Auckland, Compucon New Zealand in Auckland; and Open Parallel, Catalyst IT and Nyriad outside of Auckland.  We have organised 5 C4SKA events so far on how New Zealand contributed to SKA.  This seminar however is about how our efforts for SKA can be spinned off to New Zealand science, industry, economy, and the future.  This seminar takes a perspective that is relevant to all computing practitioners in New Zealand.  New Zealand Alliance is the organiser of the event. 

1:00pm to 1:15pm Reception

1:15pm Brief introduction of speaker and overview of speeches, John Bancroft *1
1:30pm Radio Astronomy for New Zealand, Sergei Gulyaev *2
2:00pm NZ and the SKA- Past Present and Future, Andrew Ensor *3
2:30pm Towards SKA Construction, John Bancroft *4

3:00pm to 3:30pm Tea/Coffee break

3:30pm The trouble with Scale, Piers Harding from Catalyst IT *5
4:00pm Impacts to New Zealand, TN Chan from Compucon *6
4:30pm Open Floor Discussions
4:50pm Seminar Closes

Speaker & Speeches

*1,4 John is the Director of INTERACT Project and Manager of Industry Engagement in the Research and Innovation Office of AUT

Towards SKA Construction: Updates from the SKA Project, including construction planning, procurement, MBIE's response and HPC vendor "astronomical activities". How can NZ sell to the SKA?

*2 Sergei is the Director of the Institute of Radio Astronomy and Space Research of AUT. 

Radio Astronomy from New Zealand perspectives: We live in a Golden Age of Astronomy. The Cosmos is a unique laboratory to study space, time, matter and energy, and even the Earth, to understand where we came from and where we go. New telescopes and radio telescopes have been or will be constructed on the ground or launched to orbit the Earth and Sun. Studying Astronomy is incredibly interesting, but can it be recommended as a practical pathway for future students? What role has New Zealand played in the beginning of Radio Astronomy and continues to play today? Professor Sergei Gulyaev will discuss the contribution of Radio Astronomy to science in general, as well as practical applications of scientific and technological advances in Radio Astronomy. Sergei will introduce New Zealand’s radio astronomical observatory, and talk about its contribution to space research and Earth sciences.

*3 Andrew is the Director of the NZ Alliance and the Director of HPC Research Laboratory of AUT

NZ and the SKA: Past, Present and Future: New Zealand has had a long involvement in the SKA Project. This talk will outline some of the past contributions made by the NZ SKA Alliance, current work that is underway in the Central Signal Processor and in the Science Data Processor, and briefly discuss upcoming stages for the Project as SKA1 construction approaches.

*5 Piers is a senior consultant of Catalyst IT

The trouble with scale: Everything about the SKA is blighted with the problems of scale.  This talk is about architecting applications, software and hardware infrastructure at a scale to manage a science project that needs to behave like a service, and not a one-off science experiment in order to meet it's demanding science objectives.  Treating the design, implementation and management of the Science Data Processing as a service resonates with delivering large scale business IT infrastructure and in this context there is much to share between both the science and business communities.

*6 TN is the Director of Compucon New Zealand

Impacts to New Zealand: MBIE recently released a discussion paper on why MBIE should invest in science research projects (such as SKA).  NZA is at the receiving end of investment and is obliged to address questions raised by the paper.  This session explains Compucon's work in SDP (Science Data Processor), its challenges, what Compucon has captured from the efforts, and how the knowledge can be converted into impacts to New Zealand.

 




 
DDR4-2400 SDRAM 16GB ECC REG CL17 Print
June 2017
RDIMM (ECC Registered DIMM) is a JEDEC-compliant design applicable for enterprise servers and cloud data centers. With a register between the memory module and the system’s memory controller, the RDIMM improves overall system stability and increases memory module quantity. Furthermore, it supports ECC function to detect and correct data errors, and a built-in temperature-monitoring thermal sensor to prevent overheating and improve the memory module’s reliability.

Performance

Compucon Code
1E24G16R
Density 16 GB
Organization 4Gx72
Voltage 1.2V
Speed
DDR4-2400 CL17
Operating Temperature
0℃~85℃
No. of Pin
288
Storage Temperature
-55℃~100℃


Click here to return
1E66G8R
 
DDR4-2400 SDRAM 8GB ECC REG CL17 Print
June 2017
RDIMM (ECC Registered DIMM) is a JEDEC-compliant design applicable for enterprise servers and cloud data centers. With a register between the memory module and the system’s memory controller, the RDIMM improves overall system stability and increases memory module quantity. Furthermore, it supports ECC function to detect and correct data errors, and a built-in temperature-monitoring thermal sensor to prevent overheating and improve the memory module’s reliability.

Performance

Compucon Code
1E24G8R
Density 8 GB
Organization 4Gx72
Voltage 1.2V
Speed
DDR4-2400 CL17
Operating Temperature
0℃~85℃
No. of Pin
288
Storage Temperature
-55℃~100℃


Click here to return
1E66G8R
 
850 EVO 250GB SSD Print
June 2017
What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utiliSing a smaller footprint. 

OptimiSe daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO but up to 1.9x faster random write speeds for 120/250 GB models as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. 

Get into the fast lane with the improved RAPID mode
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance boost in all random Queue depth. 

Guaranteed endurance and reliability bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW compared to the previous generation 840 EVO backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices.

General Feature
  • Capacity: 250 GB
  • Form Factor: 2.5 inch
  • Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
  • Dimension (WxHxD): 100 x 69.85 x 6.8 mm
  • AWeight: Max. 41 g
  • Storage Memory: Samsung V-NAND
  • Controller: Samsung MGX Controller
  • Cache Memory: Samsung 512 MB Low Power DDR3

 

Performance

  • Sequential Read: Up to 540 MB/seconds Sequential Read
  • Sequential Write:Up to 520 MB/seconds Sequential Write
  • Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
  • Random Write (4KB, QD32): Up to 88,000 IOPS Random Write
  • Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
  • Random Write (4KB, QD1): Up to 40,000 IOPS Random Write

 

Special Feature

  • TRIM Support: TRIM Supported
  • S.M.A.R.T Support: S.M.A.R.T Supported
  • GC (Garbage Collection): Auto Garbage Collection Algorithm
  • Encryption Support: AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
  • WWN Support: World Wide Name supported
  • Device Sleep Mode Support: Yes
  • Average Power Consumption (system level): Average: 2.4 W Maximum: 2.4 W
  • Power consumption (Idle): Max. 50 mW
  • Allowable Voltage: 5V ± 5% Allowable voltage
  • Reliability (MTBF): 1.5 Million hours Reliability (MTBF)
  • Operating Temperature: 0 - 70 °C Operating Temperature
  • Shock: 1,500 G & 0.5 ms (Half sine)

 

Click here to return

 
850 EVO 250GB SSD Print
June 2017
What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utiliSing a smaller footprint. 

OptimiSe daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO but up to 1.9x faster random write speeds for 120/250 GB models as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. 

Get into the fast lane with the improved RAPID mode
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance boost in all random Queue depth. 

Guaranteed endurance and reliability bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW compared to the previous generation 840 EVO backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices.

General Feature
  • Capacity: 250 GB
  • Form Factor: 2.5 inch
  • Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
  • Dimension (WxHxD): 100 x 69.85 x 6.8 mm
  • AWeight: Max. 41 g
  • Storage Memory: Samsung V-NAND
  • Controller: Samsung MGX Controller
  • Cache Memory: Samsung 512 MB Low Power DDR3

 

Performance

  • Sequential Read: Up to 540 MB/seconds Sequential Read
  • Sequential Write:Up to 520 MB/seconds Sequential Write
  • Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
  • Random Write (4KB, QD32): Up to 88,000 IOPS Random Write
  • Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
  • Random Write (4KB, QD1): Up to 40,000 IOPS Random Write

 

Special Feature

  • TRIM Support: TRIM Supported
  • S.M.A.R.T Support: S.M.A.R.T Supported
  • GC (Garbage Collection): Auto Garbage Collection Algorithm
  • Encryption Support: AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
  • WWN Support: World Wide Name supported
  • Device Sleep Mode Support: Yes
  • Average Power Consumption (system level): Average: 2.4 W Maximum: 2.4 W
  • Power consumption (Idle): Max. 50 mW
  • Allowable Voltage: 5V ± 5% Allowable voltage
  • Reliability (MTBF): 1.5 Million hours Reliability (MTBF)
  • Operating Temperature: 0 - 70 °C Operating Temperature
  • Shock: 1,500 G & 0.5 ms (Half sine)

 

Click here to return

 
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